Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs 5-dithia-s-indacen-2-yl]-9-(3-dimethylamino-propyl)-7-methyl-9H-fluoren-9-yl]-propyl}-dimethylamine (PBN)

5-dithia-s-indacen-2-yl]-9-(3-dimethylamino-propyl)-7-methyl-9H-fluoren-9-yl]-propyl}-dimethylamine (PBN)

Plus improved aerodynamics and mechanical performance produce more uniform films

Soft-tipped probes Sharp-tipped probes Please note: Your Ossila Four-Point Probe will require screen firmware version 1

High Density Gate Deposition Mask

Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs 5-dithia-s-indacen-2-yl]-9-(3-dimethylamino-propyl)-7-methyl-9H-fluoren-9-yl]-propyl}-dimethylamine (PBN)High Density Gate Deposition Mask Enabling accurate deposition resolution An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 100 m standoff spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution. Mask with direct contact (no spacer): For sputtering and other non directional deposition systems, as well as for thermal deposition systems with oblique angles